advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 30v simple drive requirement r ds(on) 17m fast switching characteristic i d 40a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 2.5 /w rthj-a maximum thermal resistance, junction-ambient 6 2 /w data & specifications subject to change without not ice 201501145 1 thermal data parameter pulsed drain current 1 169 operating junction temperature range -55 to 150 linear derating factor 0.4 storage temperature range total power dissipation 50 -55 to 150 drain current, v gs @ 10v 40 drain current, v gs @ 10v 30 drain-source voltage 30 gate-source voltage + 20 ap40n03gp-hf parameter rating halogen-free product g d s to-220 g d s ap40n03 series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220 package is widely preferred for all commercial- industrial through hole applications. the low thermal resistance and low package cost contribute to the worldwide popular package.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - 14 17 m v gs =4.5v, i d =16a - 20 23 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 26 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v,v gs =0v - - 250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =20a - 17 - nc q gs gate-source charge v ds =24v - 3 - nc q gd gate-drain ("miller") charge v gs =5v - 10 - nc t d(on) turn-on delay time v ds =15v - 7.2 - ns t r rise time i d =20a - 60 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 22.5 - ns t f fall time r d =0.75 - 10 - ns c iss input capacitance v gs =0v - 800 - pf c oss output capacitance v ds =25v - 380 - pf c rss reverse transfer capacitance f=1.0mhz - 133 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 40 a i sm pulsed source current ( body diode ) 1 - - 169 a v sd forward on voltage 2 t j =25 , i s =40a, v gs =0v - - 1.3 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap40n03gp-hf
ap40n03gp-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v 6.0v 5.0v 4.0v v g =3.0v 0 40 80 120 160 200 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v 6.0v 5.0v 4.0v v g =3.0v 0.2 0.8 1.4 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =18a v g =10v 8 12 16 20 24 28 32 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d =18a t c =25 1 10 100 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v)
ap40n03gp-hf fig 7. gate charge characteristics fig 8. typical capacitance characterist ics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 4 8 12 16 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =16v v ds =20v v ds =24v 0 400 800 1200 1600 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge operation in this area limited by r ds(on)
marking information 5 ap40n03gp-hf part number package code meet rohs requirement for low voltage mosfet only 40n03gp ywwsss date code (ywwsss) y last digit of the year ww week sss sequence
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